Gundogdu, T.F.Gökkavas, M.Özbay, Ekmel2016-02-082016-02-08201416878434http://hdl.handle.net/11693/26538We studied a high indium content (0.8) InGaN based solar cell design where the active InGaN layer is sandwiched between a GaN cap layer and a GaN spacer layer. The incorporation of the sacrificial cap layer allows for the etching of the front surface without removing the active InGaN resulting in a 50% enhancement of the short-circuit current density for a 15 nm-thick InGaN layer. © 2014 T. F. Gundogdu et al.EnglishGallium nitrideCap layersEfficiency enhancementGaN cap layersHigh indium contentsSolar cell designSpacer layerSolar cellsArticle10.1155/2014/605204