Akca, B. ImranDana, AykutluAydınlı, AtillaRossetti, M.Li L.Fiore, A.Dagli, N.2016-02-082016-02-0820072162-2701http://hdl.handle.net/11693/27122Conference name: Integrated Photonics and Nanophotonics Research and Applications 2007Date of Conference: 8–11 July 2007Modulation in molecular beam epitaxy grown self-assembled InAs quantum dot waveguides have been studied at 1500 nm as a function of wavelength and voltage. Enhanced electro-optic coefficients compared to bulk GaAs were observed. © 2007 Optical Society of America.EnglishIndium arsenideMolecular beam epitaxyNanophotonicsPhotonicsSemiconductor quantum dotsWaveguidesElectro optic coefficientGaAsInAs quantum dotsSelf-assembledModulationConference Paper10.1364/IPNRA.2007.IWE4