Tut, T.Yelboga, T.Ulker, E.Özbay, Ekmel2016-02-082016-02-0820080003-6951http://hdl.handle.net/11693/23162We report on the high performance solar-blind AlGaN-based p-i-n photodetectors that are grown by metal-organic chemical vapor deposition on c -plane sapphire substrates. The dark current of the 200 μm diameter devices was measured to be on the order of 5 fA for bias voltages up to 10 V. The breakdown voltages were higher than 200 V. The responsivities of the photodetectors were 0.052 and 0.093 AW at 280 nm under 0 and 40 V reverse biases, respectively. We achieved a detectivity of 7.5× 1014 cm Hz12 W for 200 μm diameter AlGaN p-i-n detectors.EnglishArticle10.1063/1.28956431077-3118