Chowdhury, F. I.Alnuaimi, A.Alkis, S.Ortaç, B.Aktürk, S.Alevli, M.Dietz, N.Okyay, Ali KemalNayfeh, A.2019-02-082019-02-082016-05http://hdl.handle.net/11693/49128In this work, 16 nm indium nitride (InN) nanoparticles (NPs) are used to increase the performance of thin-film c-Si HIT solar cells. InN NPs were spin-coated on top of an ITO layer of c-Si HIT solar cells. The c-Si HIT cell is a stack of 2 μm p type c-Si, 4–5 nm n type a-Si, 15 nm n+ type a-Si and 80 nm ITO grown on a p+ type Si substrate. On average, short circuit current density (Jsc) increases from 19.64 mA cm−2 to 21.54 mA cm−2 with a relative improvement of 9.67% and efficiency increases from 6.09% to 7.09% with a relative improvement of 16.42% due to the presence of InN NPs. Reflectance and internal/external quantum efficiency (IQE/EQE) of the devices were also measured. Peak EQE was found to increase from 74.1% to 81.3% and peak IQE increased from 93% to 98.6% for InN NPs coated c-Si HIT cells. Lower reflection of light due to light scattering is responsible for performance enhancement between 400–620 nm while downshifted photons are responsible for performance enhancement from 620 nm onwards.EnglishArticle10.1088/2053-1591/3/7/0795022053-1591