Consorte, C. D.Fong, C. Y.Watson, M. D.Yang, L. H.Çıracı, Salim2019-02-052019-02-0520011098-0121http://hdl.handle.net/11693/48883Using first-principles calculations and experimental evidence concerning the essential environment for surfactant-mediated epitaxial growth on the GaAs/Te~100! surface, we determine a short-ranged reaction path for the As↔Te exchange that is energetically favorable and prepares the surface for continued layer-by-layer growth. Furthermore, we explain the required partial coverage of the surfactant atoms as well as the required presence of both As and Ga adatoms.EnglishGAAS(001)MechanismArticle10.1103/PhysRevB.63.0413011550-235X