Rizk, A.Oruç, Feyza B.Okyay, Ali KemalNayfeh, A.2016-02-082016-02-082012http://hdl.handle.net/11693/28137Date of Conference: 20-23 Aug. 2012A thin film ZnO charge trapping memory cell with embedded nanoparticles is demonstrated by Physics Based TCAD simulation. The results show 3V increase in the Vt shift due to the nanoparticles for the same operating voltage. In addition a 6V reduction in the programming voltage is obtained due the nanoparticles. In addition, the effect of the trapping layer and tunnel oxide scaling on the 10 year retention time is studied. © 2012 IEEE.EnglishCharge TrappingMemoryNanoNanoparticlesZnOCharge trapping memoriesEmbedded nanoparticlesNanoOperating voltagePhysics-basedProgramming voltageRetention timeTCAD simulationTrapping layersTunnel oxidesZnOCharge trappingData storage equipmentNanotechnologyZinc oxideNanoparticlesConference Paper10.1109/NANO.2012.6322033