Tut, Turgut2016-07-012016-07-012004http://hdl.handle.net/11693/29445Cataloged from PDF version of article.Photodetectors are essential components of optoelectronic integrated circuits and fiber optic communication systems. AlxGa1−xN is a promising material for optoelectronics and electronics. Applications include blue and green LEDs, blue laser diodes, high power-high frequency electronics, and UV photodetectors. Photodetectors that operate only in the λ < 280 nm spectrum are called solarblind detectors due to their blindness to solar radiation within the atmosphere. In this thesis, we present our efforts for the design, fabrication and characterization of Al0.38Ga62N/GaN based solar blind Schottky photodiodes. We obtained very low dark current, high quantum efficiency, high detectivity performance. Under 25 V reverse bias, we measured a maximum quantum efficiency of 71 percent at 254 nm and a maximum responsivity of 0.15 A/W at 253 nm for a 150 micron diameter device. To our knowledge, these are the best values reported in the literature. For a 30 micron device, 50 ps FWHM pulse response is observed. When the scope response is deconvoluted, a maximum 3-dB bandwidth of 4.0 GHz is obtained for 30 micron diameter Schottky photodiodes.x, 54 leavesEnglishinfo:eu-repo/semantics/openAccessPhotodetectorHigh-SpeedQuantum EfficiencyLow Dark CurrentSchottky PhotodiodePhotodiodeTK7871.89.S35 T88 2004Diodes, Schottky-barrier.ThesisBILKUTUPB080446