Bosi G.Raffo A.Vadalà V.Trevisan F.Vannini G.Cengiz, ÖmerŞen, ÖzlemÖzbay, Ekmel2018-04-122018-04-1220169782874870446http://hdl.handle.net/11693/37743Date of Conference: 3-4 Oct. 2016In this paper, we introduce the use of the low-frequency characterization of electron devices as an accurate and economical way to fast gather consistent data about the electron device performance at microwaves in the evaluation phase of new components, technologies and processes. © 2016 European Microwave Association.EnglishGaNHEMTmeasurementssemiconductor devicesElectron devicesMeasurementsMicrowave devicesMicrowave integrated circuitsMicrowavesSemiconductor devicesDevice performanceEvaluation phaseLow-frequencyMicrowave transistorsNew componentsTime domain characterizationsHigh electron mobility transistorsConference Paper10.1109/EuMIC.2016.7777484