Acar, S.Lisesivdin, S. B.Kasap, M.Özcelik, S.Özbay, Ekmel2015-07-282015-07-282008-02-290040-6090http://hdl.handle.net/11693/13404Resistivity and Hall effect measurements on nominally undoped Al0.25Ga0.75N/GaN/AlN heterostructures grown on sapphire substrates prepared by metal organic chemical vapor deposition have been carried out as a function of temperature (20-300 K) and magnetic field (0-1.4 T). Variable magnetic field Hall data have been analyzed using the improved quantitative mobility spectrum analysis technique. The mobility and density of the two-dimensional electron gas at the AlGaN/GaN interface and the two-dimensional hole gas at the GaN/AIN interface are separated by quantitative mobility spectrum analysis. The analysis shows that two-channel conduction is present in nominally undoped Al0.25Ga0.75N/GaN/AlN heterostructures grown on sapphire substrate.EnglishAluminium gallium nitride/gallium nitrideQuantitative mobility spectrum analysisTwo-dimensional electron gasTwo-dimensional hole gasArticle10.1016/j.tsf.2007.07.1611879-2731