Gasanly, N. M.Özkan, H.Aydınlı, AtillaYilmaz, I.2016-02-082016-02-0819990038-1098http://hdl.handle.net/11693/25286The temperature dependence of the Raman-active mode frequencies in indium sulfide was measured in the range from 10 to 300 K. The analysis of the temperature dependence of the A g intralayer optical modes show that Raman frequency shift results from the change of harmonic frequency with volume expansion and anharmonic coupling to phonons of other branches. The pure-temperature contribution (phonon-phonon coupling) is due to three- and four-phonon processes.EnglishOptical propertiesPhononsRaman scatteringRaman spectroscopyThermal effectsIndium sulfideIntralayer optical modesRaman-active phonon frequenciesSemiconducting indium compoundsTemperature dependence of the Raman-active phonon frequencies in indium sulfideArticle10.1016/S0038-1098(99)00062-9