Bıyıklı, NecmiAytur, O.Kimukin, I.Tut, T.Özbay, Ekmel2016-02-082016-02-0820020003-6951http://hdl.handle.net/11693/24635We report on the design, fabrication, and characterization of solar-blind Schottky photodiodes with low noise and high detectivity. The devices were fabricated on n-/n+ AlGaN/GaN heterostructures using a microwave compatible fabrication process. True solar-blind operation with a cutoff wavelength of ∼274nm was achieved with AlxGa1-xN (x=0.38) absorption layer. The solar-blind detectors exhibited <1.8nA/cm2 dark current density in the 0-25 V reverse bias regime, and a maximum quantum efficiency of 42% around 267 nm. The photovoltaic detectivity of the devices were in excess of 2.6×1012cmHz1/2/W, and the detector noise was 1/f limited with a noise power density less than 3×10-29A2/Hz at 10 kHz. © 2002 American Institute of Physics.EnglishAbsorption layerAlGaN/GaN heterostructuresCutoff wavelengthsDetectivityDetector noiseFabrication processLow noiseNoise powerReverse biasSchottky photodiodesSolar-blindSolar-blind detectorsGalliumGallium nitridePhotodiodesFabricationArticle10.1063/1.1516856