Numerical optimization of In-mole fractions and layer thicknesses in AlxGa1-xN/AlN/GaN high electron mobility transistors with InGaN back barriers

Kelekci, O.Lisesivdin, S. B.Ozcelik, S.Özbay, Ekmel2016-02-082016-02-082011-02-010921-4526http://hdl.handle.net/11693/21975The effects of the In-mole fraction (x) of an InxGa 1-xN back barrier layer and the thicknesses of different layers in pseudomorphic AlyGa1-yN/AlN/GaN/InxGa 1-xN/GaN heterostructures on band structures and carrier densities were investigated with the help of one-dimensional self-consistent solutions of non-linear SchrdingerPoisson equations. Strain relaxation limits were also calculated for the investigated AlyGa1-yN barrier layer and InxGa1-xN back barriers. From an experimental point of view, two different optimized structures are suggested, and the possible effects on carrier density and mobility are discussed.English2DEGAlGaN/AlN/GaNBack barrierHEMTInGaNPoissonSchrdingerHigh electron mobility transistorsNumerical optimization of In-mole fractions and layer thicknesses in AlxGa1-xN/AlN/GaN high electron mobility transistors with InGaN back barriersArticle10.1016/j.physb.2011.01.059