Bulutay, C.Ridley, B. K.2016-02-082016-02-0820040749-6036http://hdl.handle.net/11693/24215Among the group-III nitrides, InN displays markedly unusual electronic transport characteristics due to its smaller effective mass, high peak velocity and high background electron concentration. First, a non-local empirical pseudopotential band structure of InN is obtained in the light of recent experimental and first-principles results. This is utilized within an ensemble Monte Carlo framework to illuminate the interesting transport properties. It is observed that InN has a peak velocity which is about 75% higher than that of GaN while at higher fields its saturation velocity is lower than that of GaN. Because of the strongly degenerate regime brought about by the high background electron concentration, the electron-electron interaction is also investigated, but its effect on the steady-state and transient velocity-field characteristics is shown to be negligible. Finally, hot phonon generation due to excessive polar optical phonon production in the electron scattering and relaxation processes is accounted for. The main findings are the appreciable reduction in the saturation drift velocity and the slower recovery from the velocity overshoot regime. The time evolution of the hot phonon distribution is analysed in detail and it is observed to be extremely anisotropic, predominantly along the electric force direction.EnglishBand structureCarrier concentrationElectron scatteringElectron transport propertiesMonte Carlo methodsOptoelectronic devicesPhononsRelaxation processesDrift velocityElectron-electron interactionInNOptical phononsIndium compoundsArticle10.1016/j.spmi.2004.09.0511096-3677