Bütün, S.Tut, T.Bütün, B.Gökkavas, M.Yu, H.Özbay, Ekmel2015-07-282015-07-282006-03-210003-6951http://hdl.handle.net/11693/11502Deep ultraviolet Al0.75Ga0.25N metal-semiconductor-metal photodetectors with high Al concentration have been demonstrated. A metal-organic chemical vapor deposition grown high quality Al0.75Ga0.25N layer was used as a template. Spectral responsivity, current-voltage, optical transmission, and noise measurements were carried out. The photodetectors exhibited a 229 nm cutoff wavelength and a peak responsivity of 0.53 A/W at 222 nm. Some 100x100 mu m(2) devices have shown a dark current density of 5.79x10(-10) A/cm(2) under 50 V bias. An ultraviolet-visible rejection ratio of seven orders of magnitude was obtained from the fabricated devices.EnglishAlganPhotodetectorsAlxga1-xnArticle10.1063/1.21869741077-3118