Hussain, N.Ahmed, S.Tepe, H. U.Huang, K.Avishan, N.He, S.Rafique, M.Farooq, U.Kasirga, Talip SerkanBek, A.Turan, R.Shehzad, K.2023-02-142023-02-142022-07-121613-6810http://hdl.handle.net/11693/111272Photoluminescence (PL) in state-of-the-art 2D materials suffers from narrow spectral coverage, relatively broad linewidths, and poor room-temperature (RT) functionality. The authors report ultra-narrow linewidth photo-emitters (ULPs) across the visible to near-infrared wavelength at RT in polymorphic selenium nanoflakes (SeNFs), synthesized via a hot-pressing strategy. Photo-emitters in NIR exhibit full width at half maximum (Γ) of 330 ± 90 µeV, an order of magnitude narrower than the reported ULPs in 2D materials at 300 K, and decrease to 82 ± 70 µeV at 100 K, with coherence time (τc) of 21.3 ps. The capping substrate enforced spatial confinement during thermal expansion at 250 °C is believed to trigger a localized crystal symmetry breaking in SeNFs, causing a polymorphic transition from the semiconducting trigonal (t) to quasi-metallic orthorhombic (orth) phase. Fine structure splitting in orth-Se causes degeneracy in defect-associated bright excitons, resulting in ultra-sharp emission. Combined theoretical and experimental findings, an optimal biaxial compressive strain of −0.45% cm−1 in t-Se is uncovered, induced by the coefficient of thermal expansion mismatch at the selenium/sapphire interface, resulting in bandgap widening from 1.74 to 2.23 ± 0.1 eV. This report underpins the underlying correlation between crystal symmetry breaking induced polymorphism and RT ULPs in SeNFs, and their phase change characteristics. © 2022 Wiley-VCH GmbH.English2D materialsHot-pressingPolymorphic phase-transitionSelenium nanoflakesUltra-narrow linewidth photo-emittersArticle10.1002/smll.2022043021613-6829