Eren, GulesinŞen, Özlem A.Bölükbaş, BasarKurt, GökhanArıcan, OrkunCengiz, ÖmerÜnal, Sıla T.K.Durmuş, YıldırımÖzbay, Ekmel2016-02-082016-02-082012http://hdl.handle.net/11693/28113Date of Conference: 3-5 Dec. 2012This paper describes design, fabrication and measurement of 6 GHz - 18 GHz monolithic microwave integrated circuit (MMIC) amplifier. The amplifier is realized as coplanar waveguide (CPW) circuit using 0.3 μm-gate Gallium-Nitride (GaN) HEMT technology. The amplifier has a small signal gain of 7 ± 0.75 dB. The output power at 3dB compression is better than 24 dBm with 16%-19% drain efficiency for the whole 6 GHz-18 GHz frequency band under continuous wave (CW) power. © 2012 IEEE.EnglishGaN HEMTCoplanar wave-guide (CPW)Gain equalizationGaN HEMTsHemt technologiesMatching networksMonolithic microwave integrated circuits (MMIC)Multi-octave bandwidthsSmall signal gainAmplifiers (electronic)Broadband amplifiersCoplanar waveguidesElectron devicesElectronic equipment testingFrequency bandsGallium nitridePower amplifiersMonolithic microwave integrated circuitsConference Paper10.1109/EDSSC.2012.6482767