Yildirim, H.Bulutay, C.2016-02-082016-02-0820080030-4018http://hdl.handle.net/11693/23053Third-order bound-charge electronic nonlinearities of Si nanocrystals (NCs) embedded in a wide band-gap matrix representing silica are theoretically studied using an atomistic pseudopotential approach. Nonlinear refractive index, two-photon absorption and optical switching parameter are examined from small clusters to NCs up to a size of 3 nm. Compared to bulk values, Si NCs show higher third-order optical nonlinearities and much wider two-photon absorption-free energy gap which gives rise to enhancement in the optical switching parameter.EnglishEmbedded nanocrystalsOptical switching parameterThird-order nonlinearitiesEnergy gapNanocrystalsRefractive indexSilicon compoundsEmbedded nanocrystalsSi nanocrystals (NC)Optical switchesArticle10.1016/j.optcom.2008.04.042