Shen, N. H.Massaouti, M.Gokkavas, M.Manceau J. M.Özbay, EkmelKafesaki, M.Koschny, T.Tzortzakis, S.Soukoulis, C. M.2016-02-082016-02-082011-01-180031-9007http://hdl.handle.net/11693/22049We experimentally demonstrate, for the first time, an optically implemented blueshift tunable metamaterial in the terahertz (THz) regime. The design implies two potential resonance states, and the photoconductive semiconductor (silicon) settled in the critical region plays the role of intermediary for switching the resonator from mode 1 to mode 2. The observed tuning range of the fabricated device is as high as 26% (from 0.76 THz to 0.96 THz) through optical control to silicon. The realization of broadband blueshift tunable metamaterial offers opportunities for achieving switchable metamaterials with simultaneous redshift and blueshift tunability and cascade tunable devices. Our experimental approach is compatible with semiconductor technologies and can be used for other applications in the THz regime.EnglishBlue shiftCritical regionExperimental approachesFabricated deviceOptical controlOther applicationsPhotoconductive semiconductorsRed shiftResonance stateSemiconductor technologySwitchableTerahertzTunabilitiesTunable deviceTunable metamaterialsTuning rangesElectronic equipmentMetamaterialsSemiconducting silicon compoundsSemiconductor device manufactureSemiconducting siliconArticle10.1103/PhysRevLett.106.037403