Gasanly, N. M.Aydınlı, A.Salihoglu, Ö.2016-02-082016-02-0820010232-1300http://hdl.handle.net/11693/24861Undoped p-GaSe layered single crystals were grown using Bridgman technique. Thermally stimulated current measurements in the temperature range of 10-300 K were performed at a heating rate of 0.18 K/s. The analysis of the data revealed three trap levels at 0.02, 0.10 and 0.26 eV. The calculation for these traps yielded 8.8 × 10-27, 1.9 × 10-25, and 3.2 × 10-21 cm2 for capture cross sections and 3.2 × 1014, 1.1 × 1016, and 1.2 × 1016 cm-3 for the concentrations, respectively.EnglishGaSeImpurity levelsLayered crystalsSemiconductor compoundsThermally stimulated currentCrystal growthCrystal impuritiesElectric current measurementElectron energy levelsElectron trapsSemiconducting gallium compoundsThermal effectsBridgman techniqueLayered crystalsThermally stimulated currentTrapping centersSingle crystalsArticle10.1002/1521-4079(200103)36:3<295