Serpengüzel, A.Aydınlı, AtillaBek, A.2016-02-082016-02-0819980022-3093http://hdl.handle.net/11693/25461A Fabry-Perot microcavity is used for the alteration of the spontaneous emission spectrum in hydrogenated amorphous silicon nitride. The modified photon density of states of the Fabry-Perot microcavity are responsible for the alteration of the spontaneous emission spectrum. The Fabry-Perot microcavity enhances the intensity of the spontaneous emission signal by a factor of 4 at the photon energies corresponding to the microcavity resonances. The 0.075 eV wide spontaneous emission linewidth of the Fabry-Perot microcavity resonances is 7 times smaller than the 0.5 eV wide spontaneous emission linewidth of the bulk hydrogenated amorphous silicon nitride. © 1998 Elsevier Science B.V. All rights reserved.EnglishFabry-Perot microcavityHydrogenated amorphous silicon nitrideSpontaneous emission spectrumElectron emissionElectron resonanceElectronic density of statesHydrogenationSilicon nitrideFabry-Perot microcavityHydrogenated amorphous silicon nitrideSpontaneous emission spectrumAmorphous siliconArticle10.1016/S0022-3093(98)00285-3