Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions

Deminskyi, PetroHaider, AliBıyıklı, NecmiOvsianitsky, A.Tsymbalenko, A.Kotov, D.Matkivskyi, V.Liakhova, N.Osinsky, V.2018-04-122018-04-1220169781509014316http://hdl.handle.net/11693/37747Date of Conference: 19-21 April 2016The paper consider oxygen contamination of HCPA ALD grown GaN films under an air conditioning and during different time duration. High resolution XPS analysis of HCPA ALD grown GaN films after diluted 1:10 HF(41 %) : H2O and undiluted HF (41 %) influence on oxygen impurities was investigated. Lesser oxygen impurities have been observed. Better resistivity to oxygen atoms of GaN thin films after diluted HF solution treatment was achieved compared to undiluted HF treatment and without treatment.EnglishContaminationGaNHCPA ALDOxygenThin filmsAir conditioningContaminationGallium nitrideHydrofluoric acidNanotechnologyOxide filmsOxygenGaN thin filmsHCPA ALDHF treatmentHigh resolutionNative oxidesOxygen contaminationOxygen impurityTime durationThin filmsInvestigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutionsConference Paper10.1109/ELNANO.2016.7493029