Kalem, Ş.Göbelek, D.Kurtar, R.Mısırlı, Z.Aydınlı, A.Ellialtioǧlu, R.2016-02-082016-02-0819950965-9773http://hdl.handle.net/11693/25896The effects of surface treatment on optical and vibrational properties of porous silicon. (por-Si) layers grown on p-type Si wafers by electroless etching technique were studied by FTIR spectroscopy and photoluminescence (PL). The results indicate a correlatiora between the PL intensity and the strength of the absorption bands induced by mulltihydride complexes (SiHn, n ≥ 2). However, similar correlation was also established for monohydride species as evidenced from the layers containing no multihydrides. Furthermore, a new band is observed at 710 cm-1 and assigned to multihydrides suggesting a ne it, local bonding environment in these layers. © 1995.EnglishAbsorptionBondingEtchingFourier transform infrared spectroscopyHydridesMechanical propertiesOptical propertiesPhotoluminescenceSilicon wafersSurface treatmentAbsorption bandsElectroless etchingMultihydride complexesStain etched siliconVibrational propertiesSiliconArticle10.1016/0965-9773(95)00192-1