21.2 mV/K high-performance Ni(50 nm)-Au(100 nm)/Ga2O3/p-Si vertical MOS type diode and the temperature sensing characteristics with a novel drive mode

Çiçek, O.Arslan, E.Altındal, Ş.Badali, Y.Özbay, Ekmel2023-02-282023-02-282022-11-091530-437Xhttp://hdl.handle.net/11693/111906Sensitivity ( S ) and drive mode are crucial issues for the vertical metal-oxide-semiconductor (MOS) type diode applied in temperature sensing. In this study, experimentally, we indicated that the S values of the Ni(50 nm) - Au(100 nm) /Ga2O3/ p -Si vertical MOS type diode, using the measured capacitance–voltage ( Cm – V ) outputs, are obtained with a novel drive mode. We applied the constant capacitance mode to drive the silicon thermo-diodes as well as constant current mode, and constant voltage mode, which are known as two different methods in the literature. Meanwhile, the S value is 21.2 mV/K at 1 nF. This value is the highest value proven in the literature excepting the cryogenic temperature region, and near room temperature. This study provided an original structure for the silicon thermo-diodes and a novel way to drive them.EnglishNovel drive modeSensitivityTemperature sensingVertical metal-oxide-semiconductor (MOS) type diode21.2 mV/K high-performance Ni(50 nm)-Au(100 nm)/Ga2O3/p-Si vertical MOS type diode and the temperature sensing characteristics with a novel drive modeArticle10.1109/JSEN.2022.32195531558-1748