Caliskan, D.Sezen H.Özbay, EkmelSüzer, Şefik2016-02-082016-02-08201520452322http://hdl.handle.net/11693/21037We report on an operando XPS investigation of a GaN diode, by recording the Ga2p 3/2 peak position under both forward and reverse bias. Areal maps of the peak positions under reverse bias are completely decoupled with respect to doped regions and allow a novel chemical visualization of the p-n junction in a 2-D fashion. Other electrical properties of the device, such as leakage current, resistivity of the domains are also tapped via recording line-scan spectra. Application of a triangular voltage excitation enables probing photoresponse of the device.EnglishArticle10.1038/srep14091