Özbay, EkmelBıyıklı, NecmiKimukin, İbrahimTut, TurgutKartaloğlu, TolgaAytür, Orhan2016-02-082016-02-0820041092-8081http://hdl.handle.net/11693/27436Date of Conference: 11-11 Nov. 2004Conference name: The 17th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2004. LEOS 2004High-performance aluminum gallium nitride (AlGaN)-based solar-blind (SB) photodetectors were demonstrated using different device structures. The Al x-Ga1-xN layers structure were grown by metalorganic chemical vapor deposition (MOCVD) on sapphire structures. n+ and p+ ohmic contacts on GaN were formed with non-annealed titanium (Ti)/aluminum (Al) and nickel (Ni)/ gold (Au) alloys. Spectral UV photoresponse measurements confirmed the solar-blind response of the devices.EnglishBandwidthCurrent densityCurrent voltage characteristicsElectric breakdownEtchingLight absorptionOhmic contactsPhotomultipliersSapphireSchottky barrier diodesSemiconducting aluminum compoundsThermal noiseUltraviolet radiationEngine monitoringHigh-speed measurementsSolar-blind (SB) detectorsUnderwater communication systemPhotodetectorsConference Paper10.1109/LEOS.2004.1363225