Ata, Erhan P.Bıyıklı, NecmiDemirel, EkremÖzbay, EkmelGökkavas, M.Onat, B.Ünlü, M. S.Tuttle, G.2016-02-082016-02-081998http://hdl.handle.net/11693/27687Date of Conference: 3-8 May 1998Conference Name: Conference on Lasers and Electro-Optics, CLEO 1998The top-illuminated Schottky photodiodes were fabricated by a microwave-compatible monolithic microfabrication process. Fabrication started with formation of ohmic contacts to n+ layers. Mesa isolation was followed by a Ti-Au interconnect metallization. Following this, a semitransparent Au Schottky metal and a silicon nitride layer was deposited. Finally, a thick Ti-Au layer was deposited to form an air bridge connection between the interconnect and the Schottky metal. The optical properties of the photodiodes were simulated using a transfer matrix method.EnglishCapacitorsFabricationFourier transformsLight sourcesMonochromatorsOhmic contactsOptical communicationOptical interconnectsOptical propertiesPhotodetectorsQuantum efficiencyResonanceResonant cavity enhanced photodetectorsSchottky photodiodesPhotodiodesHigh-speed resonant-cavity-enhanced Schottky photodiodesConference Paper10.1109/CLEO.1998.676546