Onbasli, M.C.Okyay, Ali Kemal2016-02-082016-02-0820100277-786Xhttp://hdl.handle.net/11693/28439Conference name: Proceedings of SPIE, Plasmonics: Metallic Nanostructures and Their Optical Properties VIIIDate of Conference: 1–5 August 2010State-of-the-art copper interconnects suffer from increasing spatial power dissipation due to chip downscaling and RC delays reducing operation bandwidth. Wide bandwidth, minimized Ohmic loss, deep sub-wavelength confinement and high integration density are key features that make metal-insulator-metal waveguides (MIM) utilizing plasmonic modes attractive for applications in on-chip optical signal processing. Size-mismatch between two fundamental components (micron-size fibers and a few hundred nanometers wide waveguides) demands compact coupling methods for implementation of large scale on-chip optoelectronic device integration. Existing solutions use waveguide tapering, which requires more than 4λ-long taper distances. We demonstrate that nanoantennas can be integrated with MIM for enhancing coupling into MIM plasmonic modes. Two-dimensional finite-difference time domain simulations of antennawaveguide structures for TE and TM incident plane waves ranging from λ = 1300 to 1600 nm were done. The same MIM (100-nm-wide Ag/100-nm-wide SiO2/100-nm-wide Ag) was used for each case, while antenna dimensions were systematically varied. For nanoantennas disconnected from the MIM; field is strongly confined inside MIM-antenna gap region due to Fabry-Perot resonances. Major fraction of incident energy was not transferred into plasmonic modes. When the nanoantennas are connected to the MIM, stronger coupling is observed and E-field intensity at outer end of core is enhanced more than 70 times. © 2010 SPIE.EnglishCouplerDipoleMetal-insulator-metalNanoantennaPlasmon resonanceSubwavelengthWaveguideCouplerDipoleMetal-insulator-metalNanoantennasPlasmon resonanceSub-wavelengthAntennasFinite difference time domain methodIntegrationMetal insulator boundariesMetalsNanostructuresOptical propertiesOptical signal processingOptoelectronic devicesPlasmonsSemiconductor insulator boundariesSignal processingSurface plasmon resonanceWaveguidesMIM devicesConference Paper10.1117/12.876177