Sarı, EmreNizamoğlu, SedatChoi J.H.Lee, S.J.Baik, K.H.Lee I.H.Baek J.H.Hwang, S.-M.Demir, Hilmi Volkan2016-02-082016-02-082010http://hdl.handle.net/11693/28451Date of Conference: 14-16 Dec. 2010We present a study of quantum confined electroabsorption and carrier dynamics in polar c-plane and nonpolar a-plane InGaN/GaN quantum heterostructures. We demonstrate red-shifting absorption edge, due to quantum confined Stark effect, in nonpolar InGaN/GaN quantum structures in response to increased electric field, while we show the opposite effect with blue-shifting absorption spectra in polar quantum structures. Moreover, confirmed by time-resolved photoluminescence measurements, we prove that carrier lifetimes increase with increasing electric field for nonpolar structures, whereas the opposite occurs for polar ones.EnglishA-planeAbsorption edgesCarrier dynamicsElectro-absorptionInGaN/GaNNon-polarNonpolar structuresQuantum confined stark effectQuantum heterostructuresQuantum structureTime-resolved photoluminescenceAbsorptionCrystalsElectric fieldsSemiconductor quantum wellsSpectroscopyPhotonicsConference Paper10.1109/PGC.2010.5705998