Bolat, S.Sisman, Z.Okyay, Ali Kemal2018-04-122018-04-1220160003-6951http://hdl.handle.net/11693/36641We report on the thin film transistors (TFTs) with Gallium Nitride (GaN) channels directly fabricated on flexible substrates. GaN thin films are grown by hollow cathode plasma assisted atomic layer deposition (HCPA-ALD) at 200 °C. TFTs exhibit 103 on-to-off current ratios and are shown to exhibit proper transistor saturation behavior in their output characteristics. Gate bias stress tests reveal that flexible GaN TFTs have extremely stable electrical characteristics. Overall fabrication thermal budget is below 200 °C, the lowest reported for the GaN based transistors so far. © 2016 Author(s)EnglishAtomic layer depositionBudget controlDepositionGallium alloysGallium nitridePulsed laser depositionThin film circuitsThin filmsTransistorsElectrical characteristicFlexible substrateFlexible thin filmsGallium nitrides (GaN)Gate-bias stressOutput characteristicsSaturation behaviorThin-film transistor (TFTs)Thin film transistorsDemonstration of flexible thin film transistors with GaN channelsArticle10.1063/1.4971837