Aygun, L. E.Oruc, F. B.Atar, F. B.Okyay, Ali Kemal2016-02-082016-02-082013-041943-0655http://hdl.handle.net/11693/21027We present ZnO-channel thin-film transistors with actively tunable photocurrent in the visible spectrum, although ZnO band edge is in the ultraviolet. ZnO channel is deposited by atomic layer deposition technique at a low temperature (80), which is known to introduce deep level traps within the forbidden band of ZnO. The gate bias dynamically modifies the occupancy probability of these trap states by controlling the depletion region in the ZnO channel. Unoccupied trap states enable the absorption of the photons with lower energies than the bandgap of ZnO. Photoresponse to visible light is controlled by the applied voltage bias at the gate terminal. © 2009-2012 IEEE.EnglishDefectsMetal oxideOptoelectronic materialsOxide materialsPhototransistorTFTTransparent oxideTrapsTunableVisibleMetal oxidesOpto-electronic materialsArticle10.1109/JPHOT.2013.2250274