Oruc, F. B.Aygun, L. E.Donmez, I.Bıyıklı, NecmiOkyay, Ali KemalYu, H. Y.2016-02-082016-02-0820140734-2101http://hdl.handle.net/11693/26492ZnO thin film transistors (TFTs) are fabricated on Si substrates using atomic layer deposition technique. The growth temperature of ZnO channel layers are selected as 80, 100, 120, 130, and 250°C. Material characteristics of ZnO films are examined using x-ray photoelectron spectroscopy and x-ray diffraction methods. Stoichiometry analyses showed that the amount of both oxygen vacancies and interstitial zinc decrease with decreasing growth temperature. Electrical characteristics improve with decreasing growth temperature. Best results are obtained with ZnO channels deposited at 80°C; Ion/Ioff ratio is extracted as 7.8 × 109 and subthreshold slope is extracted as 0.116 V/dec. Flexible ZnO TFT devices are also fabricated using films grown at 80°C. ID-VGS characterization results showed that devices fabricated on different substrates (Si and polyethylene terephthalate) show similar electrical characteristics. Sub-bandgap photo sensing properties of ZnO based TFTs are investigated; it is shown that visible light absorption of ZnO based TFTs can be actively controlled by external gate bias. © 2014 American Vacuum Society.EnglishAtomic layer depositionFabricationGrowth temperatureMetallic filmsSiliconThin film transistorsX ray diffractionX ray photoelectron spectroscopyAtomic layer depositedDifferent substratesElectrical characteristicLow temperaturesMaterial characteristicsSubthreshold slopeVisible light absorptionX-ray diffraction methodZinc oxideArticle10.1116/1.4892939