Ağan, S.Aydınlı, Atilla2016-02-082016-02-082009http://hdl.handle.net/11693/28651Date of Conference: 26-29 May 2009Conference Name: International Conference on Nanomeeting, 2009We have studied alternating gennanium-silicon-silicon oxide layers of 41 nm thickness grown on Si substrates by plasma enhanced chemically vapor deposition. The compositions of the grown films were detennined by X-ray photoelectron spectroscopy. The films were annealed at temperatures varying from 700 to 950 °C for 7.5 minutes under nitrogen atmosphere. High resolution cross section TEM images, electron diffraction and electron energy-loss spectroscopy as well as energy-dispersive X-ray analysis (EDAX) confinn presence of Ge nanocrystals in each layer. The effect of annealing on the Ge nanocrystal fonnation in multi layers was investigated by Raman spectroscopy and TEM.EnglishCross section TEMEffect of annealingEnergy dispersive x-rayGe nanocrystalsHigh resolutionNitrogen atmospheresSi substratesSiGe nanocrystalsElectron energy loss spectroscopyGermaniumPhotoelectronsSilicon oxidesX ray photoelectron spectroscopyNanocrystalsConference Paper10.1142/9789814280365_0017