Odabaşı, OğuzAkar, Mehmet ÖmerBütün, BayramÖzbay, Ekmel2021-02-182021-02-1820200018-9383http://hdl.handle.net/11693/75440In this article, heat generation distribution and maximum device temperature of gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) are investigated by using the 2-D electrothermal and finite-element method (FEM) simulations. Devices with different gate lengths and source-to-drain spacing are investigated. It is observed that the maximum device temperature (TMAX) depends on the drain-to-source spacing and is almost independent of the gate length and that the assumption of a uniform heat generation region, under the gate, is not accurate; this is contrary to conventional calculation methods. Moreover, based on the results, a new approximation is proposed to use in the FEM simulations that can estimate TMAX more accurately. This method does not require physics-based technology computer-aided design (TCAD) simulations and can work with a low mesh density. The performance is compared with prior methods.English2-D device simulationsAlGaNChannel temperatureFinite-element analysisGallium nitride (GaN)High-electron-mobility transistors (HEMTs)Hot pointSelfheatingTechnology computer-aided design (TCAD)Thermal analysisThermal resistanceArticle10.1109/TED.2020.2976030