Tansel, T.Kutluer, K.Muti, AbdullahSalihoğlu, ÖmerAydınlı, AtillaTuran, R.2016-02-082016-02-082013http://hdl.handle.net/11693/27975Date of Conference: 29 April–3 May 2013Conference name: Proceedings of SPIE,Infrared Technology and Applications XXXIXWe describe a relationship between the noise characterization and activation energy of InAs/GaSb superlattice Mid- Wavelength-Infrared photodiodes for different passivation materials applied to the device. The noise measurements exhibited a frequency dependent plateau (i.e. 1/f-noise characteristic) for unpassivated as well as Si3N4 passivated samples whereas 1/f-type low noise suppression (i.e. frequency independent plateau) with a noise current reduction of more than one order of magnitude was observed for SiO2 passivation. For reverse bias values below -0.15V, the classical Schottky-noise calculation alone did not appear to describe the noise mechanism in a SL noise behavior, which shows a divergence between theoretically and experimentally determined noise values. We identify that, the additional noise appears, with and without passivation, at the surface activation energy of < 60 meV and is inversely proportional to the reverse bias. This is believed to be caused by the surface dangling-bonds (as well as surface states) whose response is controlled by the applied reverse bias. The calculated noise characteristics showed a good agreement with the experimental data. © 2013 SPIE.EnglishInAs/GaSbMid-Wave-Infrared PhotodiodeNoise CharacterizationPassivationsurface activation energyFrequency independentInAs/GaSbInAs/GaSb superlatticesMid wave infrared (MWIR)Mid-wave-infrared photodiodesNoise characterizationPassivation materialsSurface activationActivation energyDangling bondsIndium antimonidesInfrared radiationPhotodiodesSuperlatticesPassivationConference Paper10.1117/12.2016388