Sevik, CemBulutay, Ceyhun2016-02-082016-02-0820071862-6351http://hdl.handle.net/11693/27028Date of Conference: 30 July-4 August 2006Conference Name: International Conference on Superlattices, Nano-Structures and Nano-Devices, ICSNN 2006Embedded semiconductor nanocrystals (NCs) within wide bandgap oxide materials are being considered for light emission and solar cell applications. One of the fundamental issues is the high-field transport in NCs. This requires the combination of a number of tools: ensemble Monte Carlo carrier transport simulation, ab initio band structure of the bulk oxide, Fermi's golden rule modeling of impact ionization and Auger processes and the pseudopotential-based atomistic description of the confined NC states. These elements are outlined in this brief report.EnglishAb initio band structuresAuger processesFermi's golden ruleHigh-field transportPseudo potentialsSemiconductor nanocrystalsSolar-cell applicationsTransport modellingTransport simulationsCivil aviationDirect energy conversionNanocrystalline alloysNanocrystalsNanostructured materialsNanostructuresNanotechnologySemiconductor materialsSolar energyImpact ionizationElements of nanocrystal high-field carrier transport modelingConference Paper10.1002/pssc.200673327