Toprak, AhmetKurt, GökhanŞen, Özlem A.Özbay, Ekmel2016-02-082016-02-082014http://hdl.handle.net/11693/27197Date of Conference: 6-7 October 2014Conference Name: 9th European Microwave Integrated Circuit Conference, EuMIC 2014In this work, we report GaN high-electron-mobility-transistors (HEMTs) on SiC with field plates of various dimensions for optimum performance. 0.6 μm gate length, 3 μm drain source space AlGaN/GaN HEMTs with field-plate lengths of 0.2, 0.3, 0.5 and 0.7 μm have been fabricated. Great enhancement in radio frequency (RF) output power density was achieved with acceptable compromise in small signal gain. When biased at 35 V, at 3 dB gain compression, a continuous wave output power density of 5.2 W/mm, power-added efficiency (PAE) of 33% and small gain of 11.4 dB were obtained at 8 GHz using device with 0.5 μm field plate length and 800 μm gate width without using via hole technology.EnglishCoplanar waveguideField plateGaN HEMTPower amplifiersRF power applicationsHigh electron mobility transistorsConference Paper10.1109/EuMIC.2014.6997843