Bıyıklı, NecmiKimukin, I.Tut, T.Kartaloglu, T.Aytur, O.Özbay, Ekmel2016-02-082016-02-0820040268-1242http://hdl.handle.net/11693/24204We report on the temporal pulse response measurements of solar-blind AlxGa1-xN-based heterojunction p-i-n photodiodes. High-speed characterization of the fabricated photodiodes was carried out at 267 nm. The bandwidth performance was enhanced by an order of magnitude with the removal of the absorbing p+ GaN cap layer. 30 μm diameter devices exhibited pulse responses with ∼70 ps pulse width and a corresponding 3 dB bandwidth of 1.65 GHz.EnglishAluminum compoundsCrystal structureDoping (additives)EtchingFast Fourier transformsHeterojunctionsMetallorganic chemical vapor depositionPlasma enhanced chemical vapor depositionSapphireScanning electron microscopyCarrier diffusionHarmonic beamsReactive ion etching (RIE)PhotodiodesArticle10.1088/0268-1242/19/11/008