Cengiz, ÖmerŞen, ÖzlemÖzbay, Ekmel2016-02-082016-02-082014-10http://hdl.handle.net/11693/27619Date of Conference: 6-9 Oct. 2014Conference name: 44th European Microwave Conference, 2014This paper presents a high power amplifier at K-band (20.2-21.2 GHz). The AlGaN/GaN CPW MMIC amplifier is realized with 0.25 μm HEMT process on 2-inch semi-insulating SiC substrate. The amplifier has a small signal gain over 20 dB for Vds=15V and measured output power of over 31 dBm at 20.2 Ghz. PAE of the amplifier is around 22% for desired frequency band. Initial radiation hardness tests indicate a suitable stability of the technology in space. © 2014 European Microwave Association.EnglishAlGaN/GaNHEMTsMMIC power amplifierRadiationSpaceAmplifiers (electronic)Frequency bandsGallium nitrideHeat radiationMicrowave amplifiersSilicon carbideHigh power amplifierMMIC amplifiersRadiation hardnessSmall signal gainPower amplifiersConference Paper10.1109/EuMC.2014.6986731