Tanatar, BilalMoldoveanu V.2016-02-082016-02-0820110094243Xhttp://hdl.handle.net/11693/28277Conference Name: 30th International Conference on the Physics of Semiconductors, ICPS 2010Date of Conference: 25-30 July 2010We present calculations on the transport properties of a double quantum dot (DQD) capacitively coupled to another individually biased dot. The effects of the intradot and interdot Coulomb interaction are included within the random-phase approximation (RPA) implemented in the Keldysh formalism. We show that by increasing the bias on the nearby dot the inelastic Coulomb scattering modifies the current in the double dot. The sign of the current depends on the detuning of the double dot levels and intradot transitions lead to negative differential conductance. The enhancement of the current due to the energy quanta transferred from the strongly biased dot suggests a quantum ratchet or Coulomb drag mechanism. © 2011 American Institute of Physics.EnglishNegative differential conductanceRatchet effectDrag effectConference Paper10.1063/1.3666366