El-Atab, N.Cimen, F.Alkis, S.Ortac, B.Alevli, M.Dietz, N.Okyay, Ali KemalNayfeh, A.2015-07-282015-07-2820140003-6951http://hdl.handle.net/11693/12761In this work, the fabrication of charge trapping memory cells with laser-synthesized indium-nitride nanoparticles (InN-NPs) embedded in ZnO charge trapping layer is demonstrated. Atomic layer deposited Al2O3 layers are used as tunnel and blocking oxides. The gate contacts are sputtered using a shadow mask which eliminates the need for any lithography steps. High frequency C-Vgate measurements show that a memory effect is observed, due to the charging of the InN-NPs. With a low operating voltage of 4 V, the memory shows a noticeable threshold voltage (Vt) shift of 2 V, which indicates that InN-NPs act as charge trapping centers. Without InN-NPs, the observed memory hysteresis is negligible. At higher programming voltages of 10 V, a memory window of 5 V is achieved and the Vt shift direction indicates that electrons tunnel from channel to charge storage layer. © 2014 AIP Publishing LLCEnglishLaser-ablationSemiconductorsNanocrystalsGenerationBlueArticle10.1063/1.4885397