Ay, FeridunAydınlı, AtillaRoeloffzen, C.Driessen, A.2016-02-082016-02-0820001092-8081http://hdl.handle.net/11693/27638Date of Conference: 13-16 November 2000Conference Name: 13th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2000Silicon oxynitride films for optical waveguide applications were grown at 350°C in a PECVD reactor. ATR-FTIR spectroscopy was used to identify the bond structure and absorption characteristics in the mid-infrared region. Annealing of the films was performed together with close monitoring of the N-H bond at 3400 cm-1 and correlated with optical loss measurements. The possibility of a new method for the reduction of the N-H bonds without annealing is discussed.EnglishAnnealingFourier transform infrared spectroscopyHydrogen bondsLight absorptionOptical filmsOptical variables measurementPlasma enhanced chemical vapor depositionRefractive indexSilicon compoundsBending vibrationsOptical loss measurementSilicon oxynitride filmStretching vibrationsOptical waveguidesConference Paper10.1109/LEOS.2000.894076