Salihoglu, O.Muti, A.Kutluer, K.Tansel, T.Turan, R.Aydınlı, Atilla2016-02-082016-02-0820120022-3727http://hdl.handle.net/11693/21328We report on the effects of monolayer (ML) thick skin-like octadecanethiol (ODT, CH 3[CH 2] 17SH) on type-II InAs/GaSb MWIR photodetectors. Circumventing the ageing effects of conventional sulfur compounds, we use ODT, a self-assembling, long molecular chain headed with a sulfur atom. Photodiodes coated with and without the self-assembled monolayer (SAM) ODT were compared for their electrical and optical performances. For ODT-coated diodes, the dark current density was improved by two orders of magnitude at 77K under 100mV bias. The zero bias responsivity and detectivity were 1.04AW 1 and 2.15 × 10 13 Jones, respectively, at 4μm and 77K. The quantum efficiency was determined to be 37% for a cutoff wavelength of 5.1μm.EnglishAgeing effectsCutoff wavelengthsDetectivityInAs/GaSbInAs/GaSb superlatticesMolecular chainsOctadecanethiolOptical performanceOrders of magnitudeResponsivitySelf-assemblingSulfur atomsZero biasDiodesIndium antimonidesPhotodetectorsSelf assembled monolayersSulfurSulfur compoundsOrganic polymersArticle10.1088/0022-3727/45/36/3651021361-6463