Ata, Erhan Polatkan2016-01-082016-01-081994http://hdl.handle.net/11693/17576Cataloged from PDF version of article.Includes bibliographical references leaves 77-81.Metal Semiconductor Field Effect Transistor (MESFET) is the most widely used active element of today’s microwave industry. After development of the MESFET technology, the microwave industry gained a high acceleration, especially in the telecommunication field. In this study, GaAs MESFETs with various dimesions and geometries were fabricated. Characterization and parameter extraction of these devices were performed, by means of low and high frequency measurements. The low cutoff frequency of the MESFETs produced were attributed to the non-optimized gate recess etch.vii, 81 leavesEnglishinfo:eu-repo/semantics/openAccessMESFETGaAsSchottky ContactOhmic Contactactive channelanalytical modelsmall-signal modelTK7871.15.G3 A83 1994Gallium arsenide semiconductors.Metal semiconductor field effect transistors.Thesis