Tut, T.Gökkavas, M.Bütün, B.Bütün, S.Ülker, E.Özbay, Ekmel2016-02-082016-02-0820060003-6951http://hdl.handle.net/11693/23666The authors report on the metal-organic chemical vapor deposition growth, fabrication, and characterization of high performance solar-blind avalanche photodetectors and the experimental evaluation of the impact ionization coefficients that are obtained from the photomultiplication data. A Schottky barrier, suitable for back and front illuminations, is used to determine the impact ionization coefficients of electrons and holes in an AlGaN based avalanche photodiode. © 2006 American Institute of Physics.EnglishAluminum compoundsAvalanche diodesElectronsIonizationMetallorganic chemical vapor depositionSolar energyIonization coefficientsPhotomultiplicationPhotodiodesArticle10.1063/1.23852161077-3118