Arslan, E.Bütün, S.Özbay, EkmelÖzbay, Ekmel2015-07-282015-07-282009-04-080003-6951http://hdl.handle.net/11693/13447In order to determine the reverse-bias leakage current mechanisms in Schottky diodes on Al0.83In0.17N/AlN/GaN heterostructures, the temperature-dependent current-voltage measurements were performed in the temperature range of 250-375 K. In this temperature range, the leakage current was found to be in agreement with the predicted characteristics, which is based on the Frenkel-Poole emission model. The analysis of the reverse current-voltage characteristics dictates that the main process in leakage current flow is the emission of electrons from a trapped state near the metal-semiconductor interface into a continuum of states which associated with each conductive dislocation.EnglishArticle10.1063/1.31158051077-3118