Süzer, Şefik2015-07-282015-07-2820121759-9660http://hdl.handle.net/11693/12995X-ray photoelectron spectroscopy (XPS) is utilized to investigate a Si-diode during its operation under both forward and reverse bias. The technique traces chemical and location specified surface potential variations as shifts of the peak positions with respect to the magnitude as well as the polarity of the applied voltage bias, which enables one to separate the dopant dependent shifts from those of the chemical ones.EnglishRay Photoelectron-spectroscopyCdse Nanoparticle FilmsOperando Raman-gcP-n-junctionsCatalystOxidationMonolayerSubstrateArticle10.1039/c2ay25901j1759-9679