Zhang, Z.-H.Tiam Tan, S.Kyaw, Z.Liu W.Ji, Y.Ju, Z.Zhang X.Wei Sun X.Volkan Demir H.2016-02-082016-02-0820130003-6951http://hdl.handle.net/11693/26694Here, GaN/AlxGa1-xN heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants. © 2013 AIP Publishing LLC.EnglishCapacitance voltage measurementsInGaN/GaNIngan/gan ledsInGaN/GaN quantum wellInjected electronsMg dopantsP-dopingRadiative recombinationGasesMetallorganic chemical vapor depositionLight emitting diodesArticle10.1063/1.4858386