Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer

Zhang, Z.-H.Tan, S.T.Liu W.Ju, Z.Zheng, K.Kyaw, Z.Ji, Y.Hasanov, N.Sun X.W.Demir, Hilmi Volkan2016-02-082016-02-08201310944087http://hdl.handle.net/11693/21065This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN. Each thin n-GaN layer sandwiched in the PNPNP-GaN structure is completely depleted due to the built-in electric field in the PNPNP-GaN junctions, and the ionized donors in these n-GaN layers serve as the hole spreaders. As a result, the electrical performance of the proposed device is improved and the optical output power and EQE are enhanced. © 2013 Optical Society of America.EnglishGallium nitrideBuilt-in electric fieldsCurrent spreadingElectrical performanceExternal quantum efficiencyInGaN/GaNIngan/gan lightemitting diodes (LEDs)Ionized donorsOptical output powerTheoretical studyLight emitting diodesgalliumgallium nitrideindiumindium nitridegalliumindiumchemistrydevice failure analysisdeviceselectric conductivityequipment designilluminationsemiconductorarticlechemistryequipmentequipment failureilluminationElectric ConductivityEquipment DesignEquipment Failure AnalysisGalliumIndiumLightingSemiconductorsElectric ConductivityEquipment DesignEquipment Failure AnalysisGalliumIndiumLightingSemiconductorsImproved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layerArticle10.1364/OE.21.004958