Özbay, EkmelBıyıklı, NecmiKimukin, İbrahimAytür, Orhan2016-02-082016-02-0819991092-8081http://hdl.handle.net/11693/27844Date of Conference: 8-11 November 1999Conference Name: LEOS’99 12th Annual Meeting: IEEE Lasers and Electro-Optics Society 1999 Annual MeetingThe fabrication of ITO (indium tin oxide)-AlAs-based resonant cavity enhanced Schottky photodiodes was examined. The device structure was designed to achieve a low-loss cavity around a 840 nm optical communication window. The layers were grown by molecular beam epitaxy on a GaAs substrate. Photoresponse measurements were carried out in 750-900 nm wavelength range using a tungsten-halogen projection lamp as the light source and single pass monochromator. Although the discrepancy between the experiment and theory was quite large, a nearly parallel enhancement of the initial efficiency values was observed as a function of the top distributed Bragg reflector pair.EnglishGallium arsenideResonancePhotodiodesConducting materialsMirrorsConference Paper10.1109/LEOS.1999.811909