Sarı, EmreNizamoğlu, SedatÖzel, TuncayDemir, Hilmi Volkanİnal, AyşeÜlker, ErkinÖzbay, EkmelDikme, Y.Heuken, M.2016-02-082016-02-0820071092-8081http://hdl.handle.net/11693/26926Date of Conference: 29 October-2 November 2006Conference Name: 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2006In this work, we present a full set of InGaN LEDs based on a single optimal InGaN/GaN quantum design with emission wavelengths spanning from green to blue to violet by tuning the active layer growth temperature to precisely control InN incorporation into the quantum structures.EnglishGallium nitrideLight emitting diodesElectroluminescenceEpitaxial growthTemperature dependenceWavelength measurementPhotoluminescenceStimulated emissionInGaN/GaN based LEDs with electroluminescence in violet, blue, and green tuned by epitaxial growth temperatureConference Paper10.1109/LEOS.2006.278805